850nm, 10 Gbps VCSEL Array (V850-209x-002)
The V850-209x-002 are high-performance 850 nm VCSEL (Vertical Cavity Surface-Emitting Laser) array die optimized for high-speed data communications.
The array die are fully stabilized and tested, ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays are available in either 4 or 12 channel configurations.
Each device is a high radiance VCSEL designed to convert electrical current
into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally.
The 850-209x-002 are designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors.
The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or ECL (Emitter Coupled Logic) gates possible and
eases driver design.
Designed to interface with 50/125 and 62.5/125mm multimode fiber, the VCSELs produce circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power.
The top (anode) contact, is a minimum 1mm Au for ease of wire bonding. Wire bonding should be done with minimal pressure to ensure the VCSEL is not damaged. The backside common VCSEL cathode is also a minimum of 1mm Au metallurgy. The die must be mounted using thermally and electrical conductive media.
The VCSEL arrays are shipped on medium tack blue tape in 6 inch grip rings.
Key Features:
V850-209x-002 Product Specification Sheet
