850nm, 10Gbps Flip Chip VCSEL Array (V850-2106-001)
The V850-2106-001 and the V850-TBD-001 are high-performance 850 nm VCSEL (Vertical Cavity Surface-Emitting Laser) array die optimized for high-speed data communications. The array die are ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays are available in either 4 or 12 channel configurations.
Each device is a high radiance VCSEL designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally.
The V850-2106-001 and the V850-TBD-001are designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors.
The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or ECL (Emitter Coupled Logic) gates possible and eases driver design.
Designed to interface with 50/125 and 62.5/125um multimode fiber, the VCSELs produce circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power.
The dual top side contacts provide a minimum 1um Au for ease of wire bonding. Wire bonding should be done with minimal pressure to ensure the VCSEL is not damaged. The die must be mounted using thermally conductive media.
The VCSEL arrays are shipped on medium tack blue tape in 6 inch grip rings.
Key Features:
V850-2106-001 Product Specification Sheet
Application note: VCSEL Optical Modes
Application note: VCSEL SPICE model
Reliability data: VCSEL Array Chip Qualification
Reliability data: An Atlas of ESD Failure Signatures in Vertical Cavity Surface Emitting Lasers
Reliability data: Reliability of Various Size Oxide Aperture VCSELs
Reliability data: Nanoscale Materials Characterisation of Degradation in VCSELs
